Marketing News

Cree will build the world's largest SiC manufacturing plant in the US

2020-12-14

Yesterday (23), Cree announced plans to build a silicon carbide (SiC) corridor on the east coast of the United States to build the world's largest silicon carbide (SiC) manufacturing facility.


According to the news, Cree will build a new 200mm power and radio frequency (RF) wafer fabrication facility that uses state-of-the-art technology and meets vehicle-level standards in Marcy, New York, USA, and complements its mega materials factory. The construction expansion is being carried out at the headquarters of the company Durham.


This new manufacturing facility is part of a previously announced initiative to significantly increase capacity for the Wolfspeed silicon carbide (SiC) and gallium nitride (GaN) businesses, building a larger, more automated and higher-production The ability of the factory. Through strategic partnerships with the Office of the Governor of New York (Andrew M. Cuomo) and other state and local agencies and entities, the company decided to build the new facility in New York State, which will provide Cree with continuous future capacity expansion and significant Net cost savings.


As a result, Cree will continue to advance its transition from silicon (Si) to silicon carbide (SiC) technology to meet the growing demand for the company's groundbreaking Wolfspeed technology, supporting the growing market for electric vehicles (EV), 4G/5G mobile and industrial markets. .


Cree Lowe, CEO of Cree, said: “Silicon Carbide (SiC) is one of the most critical technologies of our time, the core of innovation, serving a range of today's most groundbreaking and innovative markets, including the inclusion of internal combustion engines. The transition to electric vehicles (EVs), the deployment of ultra-fast 5G networks, etc. This wafer fabrication facility that uses state-of-the-art technology and meets vehicle-level standards is based on our 30 years of experience in achieving breakthrough technology commercialization. Helping our customers develop next-generation applications. We look forward to connecting our North Carolina and New York Innovation Centers to advance the adoption of silicon carbide (SiC) more quickly."


Eric J. Gertler, Acting Commissioner, President and CEO of Empire State Development, said: "We are very pleased to work with Cree to advance silicon (Si) to silicon carbide (SiC). Transformation. This collaboration will be a key part of our work to enhance research and scientific assets and to promote the future of New York State to attract more industries and create more jobs. The New York State Mohawk Valley has a unique advantage and high The value of high-tech and scientific assets. This is an important step towards improving the infrastructure of advanced manufacturing and investing in the economy of the northern part of the state."


As part of this collaboration, Cree will invest nearly $1 billion in construction, equipment and other related costs for the fab in New York State. The State will provide $500 million in funding from Empire State Development, while Cree will be able to enjoy additional local incentives and tax cuts as well as equipment and tools from the State University of New York. As a result, the company expects to achieve nearly $280 million in net capital savings from the previously announced $1 billion $1 billion capacity expansion plan. At the same time, it will bring a 25% capacity increase compared to the previously planned factory. The new plant is scheduled to be mass-produced in 2022, with a completed area of 480,000 square feet, of which nearly a quarter will be ultra-clean, providing future capacity expansion. These expansion plans will further enhance Career's leading position in the market and accelerate the adoption of silicon carbide (SiC) in a series of high-growth industries.


Creation of silicon carbide (SiC) corridors


Based in Durham's supermaterials facility and at the state-of-the-art wafer fabrication facility adjacent to Utica, Cree will create a "silicon carbide (SiC) corridor" for more than 30 years in North Carolina Research and development of the Research Triangle and leverage the rich resources of the Mohawk Valley in New York State with a strong technology base.


Career will work with local communities and four-year colleges in North Carolina and New York to conduct training and internship programs to provide human resources reserves for high-tech employment and long-term growth opportunities in the two places.

+8618028754348
reita@reitaledlighting.com
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept